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首页 > ST 意法半导体 > NOR型Flash快闪存储器

M29F032D70N6E 行业标准,5伏,32M,NOR型Flash快闪存储器

M29F032D70N6E 概述

The M29F032D is a 32 Mbit (4Mb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The memory is divided into 64 uniform blocks of 64Kbytes (see Figure 5, Block Addresses) that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in groups of 4 to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most microprocessors, often without additional logic. In order to meet environmental requirements, ST offers the M29F032D in ECOPACK? packages. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. The memory。

M29F032D70N6E 特性:
M29F032D 相关订购型号:

M29F032D70N6E
M29F032D70N6T
M29F032D70N6

M29F032D70N6E 技术支持与电子电路设计开发资源下载
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